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MBR1090CT - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number MBR1090CT
Manufacturer Vishay
File Size 122.87 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBR1090CT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com MBR1090CT, MBR10100CT Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.75 V 150 °C TO-220AB Diode variation Dual common cathode FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.
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