MBR1090CT
Key Features
- Trench MOS Schottky technology
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder bath temperature 275 °C maximum, 10 s, per
- Part: MBR1090CT
- Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 122.87 KB
Datasheets by Manufacturer
- MBR1090CT-1 — SANGDEST MICROELECTRONICS — SCHOTTKY RECTIFIER
- MBR1090CT-1-G — SANGDEST MICROELECTRONICS — SCHOTTKY RECTIFIER
- MBR1090CT — Taiwan Semiconductor — Dual Common Cathode Schottky Rectifiers
- MBR1090CT — Inchange Semiconductor — Schottky Barrier Rectifier
- MBR1090CT-G — SANGDEST MICROELECTRONICS — SCHOTTKY RECTIFIER
- MBR1090CT — EIC Semiconductor — SCHOTTKY BARRIER RECTIFIER DIODE
- MBR1090CT — Taitron Components — 10A Schottky Barrier Rectifier
- MBR1090 — onsemi — SWITCHMODE Power Rectifiers
- MBR1090 — Taiwan Semiconductor — 10A Schottky Barrier Rectifier
- MBR1090 — Kersemi — SWITCHMODE Power Rectifiers