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MBR1090CT, MBR10100CT
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
TO-220AB
PIN 1 PIN 3
3 2 1
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
2 x 5.0 A 90 V, 100 V
120 A 0.75 V 150 °C TO-220AB
Diode variation
Dual common cathode
FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 • Material categorization: for definitions of compliance
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