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Vishay Intertechnology Electronic Components Datasheet

MBR1090CT Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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MBR1090CT, MBR10100CT
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
TO-220AB
PIN 1
PIN 3
3
2
1
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
2 x 5.0 A
90 V, 100 V
120 A
0.75 V
150 °C
TO-220AB
Diode variation
Dual common cathode
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum peak reverse voltage
Maximum DC blocking voltage
total device
Maximum average forward rectified current at TC = 105 °C per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
Voltage rate of change
Operating junction and storage temperature range
SYMBOL
VRRM
VRWM
VDC
IF(AV)
IFSM
dV/dt
TJ, TSTG
MBR1090CT MBR10100CT
90 100
90 100
90 100
10
5.0
120
10 000
-65 to +150
UNIT
V
V
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL MBR1090CT
MBR10100CT
Maximum instantaneous forward voltage
Maximum reverse current per diode at
working peak reverse voltage
IF = 5.0 A
TA = 125 °C
TA = 25 °C
TA = 25 °C
TA = 100 °C
VF (1)
IR (2)
0.75
0.85
100
6.0
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
UNIT
V
μA
mA
Revision: 11-May-16
1 Document Number: 89197
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

MBR1090CT Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
MBR1090CT, MBR10100CT
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090CT
MBR10100CT
Typical thermal resistance per diode
RJC
4.4
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR10100CT-M3/4W
1.87
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
8
6
4
2
0
0 50 100 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
4.0
D = 0.8
3.5
D = 0.5
D = 0.3
3.0
D = 0.2
D = 1.0
2.5 D = 0.1
2.0
1.5 T
1.0
0.5
D = tp/T
tp
0
0123456
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics Per Diode
120
TJ = TJ Max.
100 8.3 ms Single Half Sine-Wave
80
60
40
20
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Per Diode
Revision: 11-May-16
2 Document Number: 89197
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number MBR1090CT
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
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MBR1090CT Datasheet PDF






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