Click to expand full text
www.vishay.com
MBRB1090-M3, MBRB10100-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
K
2
1
MBRB1090 MBRB10100
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM
VF TJ max. Diode variation
10 A 90 V, 100 V
150 A 0.65 V 150 °C Single die
FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C • Material categorization: For definitions of compliance
please see www.vishay.
MBRB10100-M3 Datasheet
