MBRB1090-M3 Datasheet High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com MBRB1090-M3, MBRB10100-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB K 2 1 MBRB1090 MBRB10100 PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF TJ max. Diode variation 10 A 90 V, 100 V 150 A 0.

Datasheet Details

Part number	MBRB1090-M3
Manufacturer	Vishay
File Size	89.42 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	MBRB1090-M3-Vishay.pdf

Key Features

Trench MOS Schottky technology.
Lower power losses, high efficiency.
Low forward voltage drop.
High forward surge capability.
High frequency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

MBRB1090-M3 Distributor & Price

Compare MBRB1090-M3 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Vishay

Part Number	Description
MBRB10100-M3	High-Voltage Trench MOS Barrier Schottky Rectifier
MBRB1035	High Performance Schottky Rectifier
MBRB1045	High Performance Schottky Rectifier
MBRB1050	Schottky Barrier Rectifier
MBRB1060	Schottky Barrier Rectifier
MBRB10H100	High Voltage Schottky Rectifier
MBRB10H100CT	Dual Common Cathode High Voltage Schottky Rectifier
MBRB10H90	High Voltage Schottky Rectifier
MBRB10H90	High Voltage Schottky Rectifier
MBRB10H90CT	Dual Common Cathode High Voltage Schottky Rectifier