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MBRB10100-M3 - High-Voltage Trench MOS Barrier Schottky Rectifier

Download the MBRB10100-M3 datasheet PDF. This datasheet also covers the MBRB1090-M3 variant, as both devices belong to the same high-voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRB1090-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRB10100-M3
Manufacturer Vishay
File Size 89.42 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBRB10100-M3 Datasheet

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Other Datasheets by Vishay

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MBRB1090-M3 High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com MBRB1090-M3, MBRB10100-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB K 2 1 MBRB1090 MBRB10100 PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF TJ max. Diode variation 10 A 90 V, 100 V 150 A 0.65 V 150 °C Single die FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.