MBRB10100-M3 Datasheet High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com MBRB1090-M3, MBRB10100-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB K 2 1 MBRB1090 MBRB10100 PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF TJ max. Diode variation 10 A 90 V, 100 V 150 A 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MBRB10100-M3
Manufacturer	Vishay
File Size	89.42 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	MBRB10100-M3 MBRB1090-M3 Datasheet (PDF)

Key Features

Trench MOS Schottky technology.
Lower power losses, high efficiency.
Low forward voltage drop.
High forward surge capability.
High frequency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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