MBRB10100-M3 Description
Diode variation 10 A 90 V, 100 V 150 A 0.65 V 150 °C Single die.
MBRB10100-M3 Key Features
- Trench MOS Schottky technology
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Material categorization: For definitions of pliance