MBRB10100-M3 Datasheet | Vishay

.vishay. MBRB1090-M3, MBRB10100-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB MBRB1090 MBRB10100 PIN 1 PIN 2 HEATSINK PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF TJ max. Diode variation 10 A 90 V, 100 V 150 A 0.65 V 150 °C Single die Features - Trench MOS Schottky technology - Lower power losses, high efficiency - Low forward voltage drop - High forward surge capability - High frequency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-263AB Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS-pliant, and mercial grade Terminals:...