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Vishay Intertechnology Electronic Components Datasheet

SIB900EDK Datasheet

Dual N-Channel MOSFET

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New Product
Dual N-Channel 20-V (D-S) MOSFET
SiB900EDK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.225 at VGS = 4.5 V
0.270 at VGS = 2.5 V
0.345 at VGS = 1.8 V
0.960 at VGS = 1.5 V
ID (A)a
1.5
1.5
1.5
0.5
Qg (Typ.)
1.1 nC
PowerPAK SC75-6L-Dual
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm Profile
• Typical ESD Protection 2800 V
• Rated ESD Protection 1400 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• Low Voltage Load Switch
D1
D2
1
S1
D1
D1
6
G2
5
1.60 mm
S2
4
2
G1
D2
3
D2
1.60 mm
Marking Code
Part # code
CCX
XXX
Lot Traceabilityhttp://www.DataSheet4U.net/
and Date code
G1
200 Ω
200 Ω
G2
Ordering Information: SiB900EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
20
±6
1.5a
1.5a
1.5a, b, c
1.3b, c
4
1.5a
0.9b, c
3.1
2
1.1b, c
0.7b, c
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 64808
S09-0667-Rev. A, 20-Apr-09
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIB900EDK Datasheet

Dual N-Channel MOSFET

No Preview Available !

SiB900EDK
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
90
32
Maximum
115
40
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 125 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 3 V
VDS = 0 V, VGS = ± 6 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.6 A
VGS = 2.5 V, ID = 1.5 Ahttp://www.DataSheet4U.net/
VGS = 1.8 V, ID = 1.3 A
VGS = 1.5 V, ID = 0.3 A
VDS = 10 V, ID = 1.6 A
VDS = 10 V, VGS = 4.5 V, ID = 1.7 A
f = 1 MHz
VDD = 10 V, RL = 7.7 Ω
ID 1.3 A, VGEN = 4.5 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
TC = 25 °C
IS = 1.3 A, VGS = 0 V
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min. Typ. Max.
20
21
- 2.3
0.4 1.0
±1
±1
1
10
4
0.183 0.225
0.220 0.270
0.275 0.345
0.320 0.960
3.5
1.1 1.7
0.2
0.1
200
20 30
12 20
70 105
20 30
1.5
4
0.9 1.2
Unit
V
mV/°C
V
µA
mA
µA
A
Ω
S
nC
Ω
ns
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64808
S09-0667-Rev. A, 20-Apr-09
datasheet pdf - http://www.DataSheet4U.net/


Part Number SIB900EDK
Description Dual N-Channel MOSFET
Maker Vishay
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