900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SIB914DK Datasheet

Dual N-Channel MOSFET

No Preview Available !

New Product
SiB914DK
Vishay Siliconix
Dual N-Channel 1.2-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.113 at VGS = 4.5 V
0.138 at VGS = 2.5 V
8 0.190 at VGS = 1.8 V
0.280 at VGS = 1.5 V
0.480 at VGS = 1.2 V
PowerPAK SC75-6L-Dual
1
S1
D1
D1
6
G2
5
1.60 mm
S2
4
2
G1
D2
3
D2
1.60 mm
ID (A)g
1.5a
1.5a
1.5a
1.0
0.3
Qg (Typ.)
1.5 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
RoHS
COMPLIANT
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
• DC/DC Converter
D1
D2
Marking Code
Part # code
CBX
XXX
Lot Traceability
and Date code
G1 G2
S1 S2
Ordering Information: SiB914DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
http://www.DataSheet4U.net/
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
8
±5
1.5a
1.5a
1.5a, b, c
1.5a, b, c
6
1.5a
0.9b, c
3.1
2.0
1.1b, c
0.7b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
90
32
115
°C/W
40
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 125 °C/W.
g. Based on TC = 25 °C.
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIB914DK Datasheet

Dual N-Channel MOSFET

No Preview Available !

SiB914DK
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 5 V
VDS = 8 V, VGS = 0 V
VDS = 8 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 2.5 A
VGS = 2.5 V, ID = 2.2 A
VGS = 1.8 V, ID = 1.9 A
VGS = 1.5 V, ID = 1.0 A
VGS = 1.2 V, ID = 0.1 A
VDS = 4 V, ID = 2.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VDS = 4 V, VGS = 0 V, f = 1 MHz
VDS = 4 V, VGS = 5 V, ID = 2.5 A
http://www.DataSheet4U.net/
VDS = 4 V, VGS = 4.5 V, ID = 2.5 A
f = 1 MHz
VDD = 4 V, RL = 2 Ω
ID 2.0 A, VGEN = 4.5 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 2.0 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Min.
8
0.35
6
0.7
Typ.
Max.
Unit
8.3
- 2.1
0.090
0.110
0.150
0.200
0.280
10
0.8
± 100
1
10
0.113
0.138
0.190
0.280
0.480
V
mV/°C
V
nA
µA
A
Ω
S
125
68
35
1.7
1.5
0.25
0.25
3.5
4
7
22
9
2.6
2.3
7.0
8
14
33
19
pF
nC
Ω
ns
1.5c
A
6
0.7 1.2
V
10 15 ns
2 4 nC
4
ns
6
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
datasheet pdf - http://www.DataSheet4U.net/


Part Number SIB914DK
Description Dual N-Channel MOSFET
Maker Vishay
PDF Download

SIB914DK Datasheet PDF





Similar Datasheet

1 SIB914DK Dual N-Channel MOSFET
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy