SIHG25N60EFL Datasheet MOSFET

Manufacturer: Vishay

Datasheet Details

www.vishay.com SiHG25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge PRODUCT SUMMARY VDS (V) at TJ max.

RDS(on) typ.

() at 25 °C Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 75 17 19 Single TO-247AC 0.

Reduced figure-of-merit (FOM): Ron x Qg.
Fast body diode MOSFET using E series technology.
Reduced trr, Qrr, and IRRM.
Increased robustness due to low Qrr.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Avalanche energy rated (UIS).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.