* A specific on resistance (m-cm2) reduction of 25 %
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
* Material categoriz
SIHG35N60E Datasheet (150.75 KB)
SIHG35N60E
150.75 KB
Mosfet.
www.vishay.com SiHG35N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC.
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