SIHG35N60E Datasheet MOSFET

Manufacturer: Vishay

Overview: www.vishay.com SiHG35N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 132 22 46 Single 0.

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SIHG35N60E mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SIHG35N60E
Manufacturer	Vishay
File Size	150.75 KB
Description	MOSFET
Download	SIHG35N60E Download (PDF)

Key Features

A specific on resistance (m-cm2) reduction of 25 %.
Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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