SIHL630 mosfet equivalent, power mosfet.
200 V 0.40
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 150 °C Operating T.
at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contrib.
G S G D S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred f.
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