SIR662DP - N-Channel MOSFET

Features

TrenchFET® power MOSFET.
100 % Rg and UIS tested.
Low Qg for high efficiency.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SIR662DP
Manufacturer	Vishay
File Size	381.00 KB
Description	N-Channel MOSFET
Datasheet	SIR662DP Datasheet

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Full PDF Text Transcription

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www.vishay.com SiR662DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 0.0027 at VGS = 10 V 0.0033 at VGS = 6 V 0.0048 at VGS = 4.5 V ID (A) a 100 PowerPAK® SO-8 Single D D8 D7 D6 5 Qg (TYP.) 27.5 nC 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR662DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Low Qg for high efficiency • Material categorization: for definitions of compliance please see www.vishay.

Published: Feb 11, 2016 |