SIUD412ED Key Features
- TrenchFET® power MOSFET
- Ultra small 0.8 mm x 0.6 mm outline
- Ultra thin 0.4 mm max. height
- Typical ESD protection 1500 V (HBM)
- 1.2 V rated RDS(ON)
- 100% Rg tested
- Material categorization: for definitions of pliance
- Part: SIUD412ED
- Manufacturer: Vishay (official site)
- Size: 180.53 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| SiUD402ED | N-Channel MOSFET |
| SIUD403ED | P-Channel MOSFET |
SIUD412ED Description
SiUD412ED Vishay Siliconix N-Channel 12 V (D-S) MOSFET PowerPAK® 0806 Single D 3 0.4 mm 0.8 mm 1 0.6 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max.