* TrenchFET® power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
SUM60030E Datasheet (191.20 KB)
SUM60030E
191.20 KB
N-channel 80v (d-s) mosfet.
www.vishay.com SUM60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET TO-263 Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10.
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