SUM110N06-05L Datasheet | Vishay

FEATURES r DS(on) (W) ID (A) 110 a 0.0052 @ VGS = 10 V 0.0072 @ VGS = 4.5 V D Trench FETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial TO-263 Top View Ordering Information: SUM110N06-05L SUM110N06-05L- E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 m H TC = 25_C TA = 25_C d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 110a 82a 300 75 280 230c 3.75 - 55 to 175 Unit A m J W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient- PCB Mountd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72006 S-32618- Rev. B, 29-Dec-03 .vishay. Symbol Rth JA Rth JC Limit 40 0.65 Unit _C/W Vishay Siliconix New Product .. SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 m A VDS = VGS, ID = 250 m A VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea r DS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0044 0.0059 0.0052 0.0072 0.0085 0.011 S W 60 1 3 "100 1 50 250 A m A V n A Symbol Test...