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SUM110N06-05L - N-Channel MOSFET

Key Features

  • rDS(on) (W) ID (A) 110 a 0.0052 @ VGS = 10 V 0.0072 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package.

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SUM110N06-05L New Product Vishay Siliconix www.DataSheet4U.com N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 110 a 0.0052 @ VGS = 10 V 0.0072 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive and Industrial D TO-263 G G D S S Top View Ordering Information: SUM110N06-05L SUM110N06-05L—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.