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SUM110N06-3m4L
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Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 60 rDS(on) (Ω) 0.0034 at VGS = 10 V 0.0041 at VGS = 4.5 V ID (A) 110a
FEATURES
• TrenchFET® Power MOSFET • 100 % Rg Tested
RoHS
COMPLIANT
D
TO-263
G
G
D S
S
Top View
Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.