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Si1069X Datasheet

P-Channel 20 V (D-S) MOSFET

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P-Channel 20 V (D-S) MOSFET
Si1069X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 20 0.184 at VGS = - 4.5 V
0.268 at VGS = - 2.5 V
ID (A)
- 0.94
- 0.78
Qg (Typ.)
4.23
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
SC-89 (6-LEADS)
D1
6D
D2
5D
G3
4S
APPLICATIONS
• Load Switch for Portable Devices
Marking Code
Y XX
Lot Traceability
and Date Code
Part # Code
S
G
Top View
Ordering Information: Si1069X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 20
± 12
- 0.94b, c
- 0.75b, c
-8
- 0.2b, c
0.236b, c
0.151b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Notes:
a. Based on TA = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
t 5 s
Steady State
Symbol
RthJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 70442
S10-2542-Rev. C, 08-Nov-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si1069X Datasheet

P-Channel 20 V (D-S) MOSFET

No Preview Available !

Si1069X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductance
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 0.94 A
VGS = - 2.5 V, ID = - 0.78 A
VDS = - 10 V, ID = - 0.94 A
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 5 V, ID = - 0.94 A
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 0.94 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
td(on)
tr
td(off)
VDD = - 10 V, RL = 13.3
ID - 0.75 A, VGEN = - 4.5 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
VSD
IS = - 0.64 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 0.64 A, dI/dt = 100 A/µs
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.6
-8
Typ.
- 16.7
2.95
0.153
0.218
4
308
78
59
4.57
4.23
0.71
1.67
9
19
31
23
7
- 0.8
19
6.65
7
12
Max.
Unit
- 1.5
± 100
-1
- 10
0.184
0.268
V
mV/°C
V
nA
nA
µA
A
S
6.86
6.35
pF
nC
13.5
28.5
47
34.5
10.5
8
- 1.2
28.5
10
ns
A
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70442
S10-2542-Rev. C, 08-Nov-10


Part Number Si1069X
Description P-Channel 20 V (D-S) MOSFET
Maker Vishay
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