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Si4447DY Datasheet

P-Channel 40-V (D-S) MOSFET

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P-Channel 40-V (D-S) MOSFET
Si4447DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 40 0.054 at VGS = - 10 V
0.072 at VGS = - 4.5 V
ID (A)
- 4.5
- 3.9
Qg (Typ.)
9
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
100 % UIS Tested
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• CCFL Inverter
S
G
Top View
Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free)
Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 40
Gate-Source Voltage
VGS
± 16
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 4.5
- 3.6
- 3.3
- 2.7
Pulsed Drain Current
IDM - 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
16
13
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
85
30
Maximum
62.5
110
40
Unit
°C/W
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4447DY Datasheet

P-Channel 40-V (D-S) MOSFET

No Preview Available !

Si4447DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate-Source Threshold Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Leakage
VGS(th)
ΔVDS/TJ
ΔVGS(th)/TJ
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
gfs
Diode Forward Voltagea
VSD
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = - 250 µA
ID = - 250 µA
VDS = 0 V, VGS = ± 16 V
VDS = - 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 4.5 A
VGS = - 15 V, ID = - 4.5 A
VDS = - 15 V, ID = - 4.5 A
IS = - 1.7 A, VGS = 0 V
VDS = - 20 V, VGS = 0 V, f = 1 MHz
VDS = - 20 V, VGS = - 4.5 V, ID = - 4.5 A
f = 1 MHz
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
IF = 1.7 A, dI/dt = 100 A/µs
- 0.8
- 20
- 40
3.4
0.045
0.059
13
- 0.79
805
120
85
9
2
3.6
11.5
8
12
74
38
27
17
- 2.2
± 100
-1
- 10
0.054
0.072
- 1.2
V
mV/°C
nA
µA
A
Ω
S
V
pF
14
nC
18 Ω
13
18
110 ns
60
45
26 nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
VGS = 10 V thru 4 V
16
20
16
12 12
3V
88
TC = - 55 °C
25 °C
125 °C
44
0
0
www.vishay.com
2
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09


Part Number Si4447DY
Description P-Channel 40-V (D-S) MOSFET
Maker Vishay
Total Page 6 Pages
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