Si4441EDY Datasheet | Vishay

FEATURES - Trench FET® Power MOSFET - ESD Protected: 2500 V Pb-free Available APPLICATIONS - Battery and Load Switching - Notebook Ro HS- PLIANT SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4441EDY-T1 Si4441EDY-T1-E3 (Lead (Pb)-free) P-Channel 8 7 6 5 D D D D G 7600 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 2.1 2.5 1.6 - 55 to 150 - 10.6 - 8.5 - 40 - 1.3 1.5 0.9 W °C 10 secs Steady State - 30 ± 20 - 8.1 - 6.5 A V Unit THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t ≤ 10 sec Steady State Steady State Symbol Rth JA Rth JF Typical 37 70 16 Maximum 50 85 20 Unit °C/W - Pb containing terminations are not Ro HS pliant, exemptions may apply. Document Number: 72133 S-60777-Rev. B, 08-May-06 .vishay. 1 Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω VDS = - 15 V, VGS = - 10 V, ID = - 10.6 A 45.5 6.5 12.5 5 11 45 35 8 20 70 55 ns 70 n C a Symbol VGS(th) IGSS IDSS ID(on) r DS(on) gfs...