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P-Channel 40-V (D-S) MOSFET
Si4447DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 40 0.054 at VGS = - 10 V 0.072 at VGS = - 4.5 V
ID (A) - 4.5 - 3.9
Qg (Typ.) 9
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested • 100 % UIS Tested
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
APPLICATIONS • CCFL Inverter
S
G
Top View
Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free) Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 40
Gate-Source Voltage
VGS
± 16
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 4.5 - 3.6
- 3.3 - 2.