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Si4447DY - P-Channel 40-V (D-S) MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D.

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Datasheet Details

Part number Si4447DY
Manufacturer Vishay
File Size 103.08 KB
Description P-Channel 40-V (D-S) MOSFET
Datasheet download datasheet Si4447DY Datasheet

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P-Channel 40-V (D-S) MOSFET Si4447DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 40 0.054 at VGS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 4.5 - 3.9 Qg (Typ.) 9 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS • CCFL Inverter S G Top View Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free) Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 16 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 4.5 - 3.6 - 3.3 - 2.