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P-Channel 40-V (D-S) MOSFET
Si4401BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 40
0.014 at VGS = - 10 V
0.021 at VGS = - 4.5 V
ID (A) - 10.5 - 8.7
Qg (Typ.) 40
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4401BDY-T1-E3 (Lead (Pb)-free) Si4401BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 40
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 10.5 - 8.3
- 8.7 - 5.
Si4401BDY Datasheet
