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Si4403DY
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.017 @ VGS = –4.5 V –20 0.023 @ VGS = –2.5 V 0.032 @ VGS = –1.8 V
FEATURES
ID (A)
–9 –7 –6
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch – Game Stations – Notebooks – Desktops
S
SO-8
S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D G D D D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –7 IDM IS –2.1 2.5 1.6 –55 to 150 –30 –1.3 1.35 0.87 W _C –5.
SI4403DY Datasheet
