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P-Channel 30-V (D-S) MOSFET
Si4405DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 30 0.0075 at VGS = - 10 V
ID (A) - 17
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4405DY-T1 Si4405DY-T1-E3 (Lead (Pb)-free)
FEATURES • TrenchFET® Power MOSFETS • 100 % Rg Tested APPLICATIONS • Battery and Load Switching
- Notebook Computers - Notebook Battery Packs
S
G
D P-Channel MOSFET
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 17 - 11 - 13 - 9
Pulsed Drain Current Continuous Source Current (Diode Conduction)a
IDM - 60
IS
- 2.9
- 1.
SI4405DY Datasheet
