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Si4403BDY
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.017 @ VGS = - 4.5 V - 20 0.023 @ VGS = - 2.5 V 0.032 @ VGS = - 1.8 V
FEATURES
ID (A)
- 9.9 - 8.5 - 7.2
D TrenchFETr Power MOSFETS
S
SO-8
S S S G 1 2 3 4 Top View D Ordering Information: Si4403BDY Si4403BDY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D G D D D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 7.9 IDM IS - 2.3 2.5 1.6 - 55 to 150 - 30 - 1.3 1.35 0.87 W _C - 5.
SI4403BDY Datasheet
