The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P-Channel 40-V (D-S) MOSFET
Si4401DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 40
RDS(on) (Ω) 0.0155 at VGS = - 10 V 0.0225 at VGS = - 4.5 V
ID (A) - 10.5 - 8.7
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4401DY-T1-E3 (Lead (Pb)-free) Si4401DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 10.5 - 8.3
- 8.7 - 5.9
Pulsed Drain Current
IDM - 50
Continuous Source Current (Diode Conduction)a
IS
- 2.7
- 1.
SI4401DY Datasheet
