SI4403CDY Overview
New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET.
SI4403CDY Key Features
- 10.5 36.5 nC Qg (Typ.)
- 20 RDS(on) () 0.0155 at VGS =
- 4.5 V 0.0195 at VGS =
- 2.5 V 0.0250 at VGS =
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to RoHS Directive 2002/95/EC
