* Extended VGS range (± 25 V) for adaptor switch applications
* Extremely low RDS(on)
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Typical ESD Performance: 4000 V (HBM)
* Material categorization: For definitions of compliance please see www.vi
Si4491EDY Datasheet (227.51 KB)
Si4491EDY
227.51 KB
P-channel 30v (d-s) mosfet.
New Product P-Channel 30 V (D-S) MOSFET Si4491EDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0065 at VGS = - 10 V - 30 0.0082 a.
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