SiA907EDJT-T1-GE3 Overview
Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at VGS = -2.5 V ID (A) -4.5 a -4.5 a Qg (TYP.) 4.9.
SiA907EDJT-T1-GE3 Key Features
- TrenchFET® power MOSFET
- Thermally enhanced Thin PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
- Typical ESD protection: 1500 V HBM
- High speed switching
- Material categorization: For definitions of pliance please see .vishay./doc?99912
SiA907EDJT-T1-GE3 Applications
- Charger Switch, Load Switch for Portable Devices