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SiA907EDJT-T4-GE3 - Dual P-Channel 20 V (D-S) MOSFET

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Vishay

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SiA907EDJT-T4-GE3 Dual P-Channel 20 V (D-S) MOSFET by Vishay - Datasheet Preview — Datasheet preview – SiA907EDJT-T4-GE3

Datasheet Details

Part number	SiA907EDJT-T4-GE3
Manufacturer	Vishay
File Size	249.56 KB
Description	Dual P-Channel 20 V (D-S) MOSFET
Datasheet	SiA907EDJT-T4-GE3 Datasheet
Note	This datasheet PDF includes multiple part numbers: SiA907EDJT-T4-GE3, SiA907EDJT. Please refer to the document for exact specifications by model.
Additional preview pages of the SiA907EDJT-T4-GE3 datasheet.

Product details

Features

TrenchFET® power MOSFET.
Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
Typical ESD protection: 1500 V HBM.
High speed switching.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 PowerPAK® SC-70-6L Dual S2 4 G2 5 D1 6 D1 D2.

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Published: Oct 30, 2014 |