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SiDR626EP Datasheet N-channel MOSFET

Manufacturer: Vishay

Overview: www.vishay.com SiDR626EP Vishay Siliconix N-Channel 60 V (D-S) 175 °C MOSFET PowerPAK® SO-8DC D D D 6 D 7 8 5 S 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 60 0.00174 0.

SiDR626EP datasheet preview

Datasheet Details

Part number	SiDR626EP
Manufacturer	Vishay
File Size	172.57 KB
Description	N-Channel MOSFET
Datasheet	SiDR626EP-Vishay.pdf

Key Features

TrenchFET® Gen IV power MOSFET.
Very low RDS - Qg figure of merit (FOM).
Tuned for the lowest RDS - Qoss FOM.
100 % Rg and UIS tested.
Top side cooling feature provides additional venue for thermal transfer.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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