Datasheet Summary
.vishay.
Vishay Siliconix
N-Channel 60 V (D-S) 175 °C MOSFET
PowerPAK® SO-8DC
D 6
D 7
6.15 mm
1 5.15 mm
Top View
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration
3 S
2 S
Bottom View
60 0.00174 0.0021
51 227 Single
Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS
- Qg figure of merit (FOM)
- Tuned for the lowest RDS
- Qoss FOM
- 100 % Rg and UIS tested
- Top side cooling feature provides additional venue for thermal transfer
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Synchronous...