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SiDR680ADP - N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS - Qg figure-of-merit (FOM).
  • Tuned for the lowest RDS - Qoss FOM.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com SiDR680ADP Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® SO-8DC D D D 6 D 7 8 5 S 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 80 0.00288 0.00350 43 137 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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