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SiDR626EP - N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS - Qg figure of merit (FOM).
  • Tuned for the lowest RDS - Qoss FOM.
  • 100 % Rg and UIS tested.
  • Top side cooling feature provides additional venue for thermal transfer.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiDR626EP
Manufacturer Vishay
File Size 172.57 KB
Description N-Channel MOSFET
Datasheet download datasheet SiDR626EP Datasheet

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Full PDF Text Transcription

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www.vishay.com SiDR626EP Vishay Siliconix N-Channel 60 V (D-S) 175 °C MOSFET PowerPAK® SO-8DC D D D 6 D 7 8 5 S 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 60 0.00174 0.0021 51 227 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure of merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Top side cooling feature provides additional venue for thermal transfer • Material categorization: for definitions of compliance please see www.vishay.
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