SiDR626EP Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 60 0.00174 0.0021 51 227 Single.
SiDR626EP Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS
- Qg figure of merit (FOM)
- Tuned for the lowest RDS
- Qoss FOM
- 100 % Rg and UIS tested
- Top side cooling feature provides
- Material categorization: for definitions of pliance please see .vishay./doc?99912