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SiHB125N65E Datasheet Power MOSFET

Manufacturer: Vishay

Overview: www.vishay.com SiHB125N65E Vishay Siliconix E Series Power MOSFET D D2PAK (TO-263) GD S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 57 15 14 Single 0.

Key Features

  • 4th generation E series technology.
  • Low figure-of-merit (FOM) Ron x Qg.
  • Low effective capacitance (Co(er)).
  • Reduced switching and conduction losses.
  • Avalanche energy rated (UIS).
  • Kelvin connection for reduced gate noise.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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