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SiHB21N60EF - Power MOSFET

Features

  • Fast body diode MOSFET using E series technology.
  • Reduced trr, Qrr, and IRRM.
  • Low figure-of-merit (FOM): Ron x Qg.
  • Low input capacitance (Ciss).
  • Increased robustness due to low Qrr.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SiHB21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 84 14 24 Single D2PAK (TO-263) 0.176 D GD S G S N-Channel MOSFET FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
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