SiHB21N60EF Overview
SiHB21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. at 25 °C () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 84 14 24 Single D2PAK (TO-263) 0.176 D GD S G S N-Channel MOSFET.
SiHB21N60EF Key Features
- Fast body diode MOSFET using E series
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Increased robustness due to low Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance