* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM): Ron x Qg
* Low input capacitance (Ciss)
* Increased robustness due to low Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated (UI
SiHB21N60EF Datasheet (213.40 KB)
SiHB21N60EF
213.40 KB
Power mosfet.
www.vishay.com SiHB21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (.
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