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Vishay Intertechnology Electronic Components Datasheet

SiHB21N65EF Datasheet

Power MOSFET

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www.vishay.com
SiHB21N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
700
VGS = 10 V
106
14
33
Single
0.18
D
D2PAK (TO-263)
GD
S
G
S
N-Channel MOSFET
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Low switching losses due to reduced Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power supplies (SMPS)
• Applications using the following topologies
- LCC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D2PAK (TO-263)
SiHB21N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
650
± 30
21
13
53
1.7
367
208
-55 to +150
37
31
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S15-2686-Rev. A, 16-Nov-15
1
Document Number: 91606
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiHB21N65EF Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
SiHB21N65EF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 520 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 11 A
VDS = 30 V, ID = 11 A
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 520 V, VGS = 0 V
VGS = 10 V
ID = 11 A, VDS = 520 V
VDD = 520 V, ID = 11 A,
VGS = 10 V, Rg = 9.1
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM p - n junction diode
S
MIN.
650
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.67
-
-
-
-
-
0.15
7.0
2322
105
4
84
293
71
14
33
22
34
68
42
0.78
-
-
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 11 A, VGS = 0 V
- 0.9
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 11 A,
dI/dt = 100 A/μs, VR = 25 V
- 160
- 1.2
- 14
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX. UNIT
-
-
4
± 100
±1
1
500
0.18
-
V
V/°C
V
nA
μA
μA
S
-
-
-
pF
-
-
106
- nC
-
44
68
ns
102
84
-
21
A
53
1.2 V
- ns
- μC
-A
S15-2686-Rev. A, 16-Nov-15
2
Document Number: 91606
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiHB21N65EF
Description Power MOSFET
Maker Vishay
Total Page 7 Pages
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