SiHB22N60S Description
SiHB22N60S Vishay Siliconix S Series Power MOSFET PRODUCT SUMMARY VDS at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 17 25 Single 0.190 D2PAK (TO-263) D GD S G S N-Channel MOSFET.
SiHB22N60S Key Features
- Generation One
- Halogen-free According to IEC 61249-2-21
- High EAR Capability
- Lower Figure-of-Merit Ron x Qg
- 100 % Avalanche Tested
- Ultra Low Ron
- dV/dt Ruggedness
- Ultra Low Gate Charge (Qg)
- pliant to RoHS Directive 2002/95/EC
- Pb containing terminations are not RoHS pliant, exemptions