SiHB24N65E Description
SiHB24N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 122 21 37 Single 0.145 D D2PAK (TO-263) G GD S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free.
SiHB24N65E Key Features
- Halogen-free According to IEC 61249-2-21
- Low Figure-of-Merit (FOM) Ron x Qg
- Low Input Capacitance (Ciss)
- Reduced Switching and Conduction Losses
- Ultra Low Gate Charge (Qg)
- Avalanche Energy Rated (UIS)
- pliant to RoHS Directive 2002/95/EC