* A specific on resistance (m-cm2) reduction of 25 %
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
* Material categoriz
SiHB35N60E Datasheet (209.78 KB)
SiHB35N60E
209.78 KB
Power mosfet.
www.vishay.com SiHB35N60E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) D GD S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max..
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