SiHB33N60E Datasheet | Vishay

FEATURES - Low figure-of-merit (FOM): Ron x Qg - Low input capacitance (Ciss) - Reduced switching and conduction losses - Ultra low gate charge (Qg) - Avalanche energy rated (UIS) Available - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Server and tele power supplies - Switch mode power supplies (SMPS) - Power factor correction power supplies (PFC) - Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting - Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) D2PAK (TO-263) Si HB33N60E-E3 Si HB33N60E-GE3 Si HB33N60ET5-GE3 Si HB33N60ET1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode d V/dt d VDS = 0 V to 80 % VDS EAS PD TJ, Tstg d V/dt Soldering Remendations (Peak temperature) c for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 m H, Rg = 25 , IAS = 7.5 A c. 1.6 mm from case d. ISD  ID, d I/dt = 100 A/μs, starting TJ = 25 °C LIMIT 600 ± 30 33 21 88 2.2 793...