SiHB33N60E Description
SiHB33N60E Vishay Siliconix E Series Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 150 24 42 Single 0.099 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free.
SiHB33N60E Key Features
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912