SiHB35N60E Datasheet | Vishay

FEATURES - A specific on resistance (m-cm2) reduction of 25 % - Low figure-of-merit (FOM) Ron x Qg - Low input capacitance (Ciss) - Reduced switching and conduction losses - Ultra low gate charge (Qg) - Avalanche energy rated (UIS) - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Power factor correction power supplies (PFC) - Hard switching PWM stages - puting - Switch mode power supplies (SMPS) - Lighting - Light emitting diode (LED) - High intensity discharge (HID) - Tele - Server power supplies - Renewable energy - Photovoltaic inverters - Industrial - Welding - Induction heating - Motor drives - Battery chargers - Uniterruptable power supplies D2PAK (TO-263) Si HB35N60E-GE3 Si HB35N60ET1-GE3 Si HB35N60ET5-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode d V/dt d TJ = 125...