SiHB35N60E Description
SiHB35N60E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) D GD S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 132 22 46 Single 0.082 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free.
SiHB35N60E Key Features
- A specific on resistance (m-cm2) reduction of 25 %
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance