SiHB30N60E Description
SiHB30N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 130 15 39 Single 0.125 D2PAK (TO-263) D GD S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free.
SiHB30N60E Key Features
- Low Figure-of-Merit (FOM) Ron x Qg
- Low Input Capacitance (Ciss)
- Reduced Switching and Conduction Losses
- Ultra Low Gate Charge (Qg)
- Avalanche Energy Rated (UIS)
- Material categorization: For definitions please .vishay./doc?99912