* 4th generation E series technology
* Low figure-of-merit (FOM) Ron x Qg
* Low effective capacitance (Co(er))
* Reduced switching and conduction losses
* Avalanche energy rated (UIS)
* Material categorization: for definitions of compliance please see
SiHK045N60E Datasheet (227.42 KB)
SiHK045N60E
227.42 KB
Power mosfet.
www.vishay.com SiHK045N60E Vishay Siliconix E Series Power MOSFET Drain tab Gate pin 1 Driver source pin 2 Source pin 3 to 8 N-Channel MOSFET PROD.
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