Datasheet Summary
.vishay.
Vishay Siliconix
EF Series Power MOSFET With Fast Body Diode
Drain tab
Gate pin 1
Driver source pin 2 Source pin 3 to 8
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
51 16 8 Single
Features
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Server and tele power supplies
- Switch mode power supplies (SMPS)
- Power...