SiHLZ34S Datasheet | Vishay

FEATURES - Advanced process technology - Surface-mount - 175 °C operating temperature Available - Fast switching - Fully avalanche rated Available - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that power MOSFETs are known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK (TO-263) is a surface-mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free D2PAK (TO-263) Si HLZ34S-GE3 IRLZ34SPb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 5 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c TC = 25 °C TA = 25 °C EAS PD dv/dt Operating junction and storage temperature range TJ, Tstg Soldering remendations (peak temperature) d For 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature...