* Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness Available - Avalanche energy rated (UIS)
* Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low fi
SiHU5N50D Datasheet (208.41 KB)
SiHU5N50D
208.41 KB
Power mosfet.
www.vishay.com SiHU5N50D Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC).
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