SiHU5N50D
SiHU5N50D is Power MOSFET manufactured by Vishay.
FEATURES
- Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
Available
- Avalanche energy rated (UIS)
- Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg
- Fast switching
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Consumer electronics
- Displays (LCD or plasma TV)
- Server and tele power supplies
- SMPS
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and Halogen-free
IPAK (TO-251) Si HU5N50D-E3 Si HU5N50D-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy...
