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Vishay Intertechnology Electronic Components Datasheet

SiR426DP Datasheet

N-Channel 40-V (D-S) MOSFET

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N-Channel 40-V (D-S) MOSFET
SiR426DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0105 at VGS = 10 V
40
0.0125 at VGS = 4.5 V
ID (A)
30a
30a
Qg (Typ.)
9.3 nC
PowerPAK SO-8
6.15 mm
S
1S
5.15 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
SiR426DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DC/DC Converters
- Synchronous Buck
- Synchronous Rectifier
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 40
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VGS
ID
± 20
30a
30a
15.9b, c
12.8b, c
Pulsed Drain Current
IDM 70
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
L = 0.1 mH
TC = 25 °C
TA = 25 °C
IAS
EAS
IS
20
20
30a
4b, c
TC = 25 °C
41.7
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
26.7
4.8b, c
3.1b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
21
2.4
Maximum
26
3
Unit
°C/W
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65162
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0461-Rev. B, 04-Mar-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiR426DP Datasheet

N-Channel 40-V (D-S) MOSFET

No Preview Available !

SiR426DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
VDS/TJ
VGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS 10 V, ID = 15 A
VGS 4.5 V, ID = 10 A
VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 20 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 20 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 20 V, RL = 2
ID 10 A, VGEN = 4.5 V, Rg = 1
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 4 A, VGS 0 V
IF = 10 A, dI/dt = 100 A/µs,
TJ = 25 °C
Min.
Typ.
Max.
Unit
40 V
47
- 5.4
mV/°C
1.2 2.5 V
± 100
nA
1
µA
5
30 A
0.0085 0.0105
0.0104 0.0125
43 S
1160
185
70
20.5 31
9.3 14
3.1
2.5
0.2 0.8 1.6
18 35
15 30
18 35
10 20
9 18
9 18
18 35
8 16
30
70
0.77 1.2
23 45
19 38
14
9
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 65162
2 S13-0461-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiR426DP
Description N-Channel 40-V (D-S) MOSFET
Maker Vishay
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SiR426DP Datasheet PDF






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