• Part: SiR426DP
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Vishay
  • Size: 309.55 KB
Download SiR426DP Datasheet PDF
Vishay
SiR426DP
FEATURES - Trench FET® Power MOSFET - 100 % Rg and UIS Tested - Material categorization: For definitions of pliance please see .vishay./doc?99912 APPLICATIONS - DC/DC Converters - Synchronous Buck - Synchronous Rectifier S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VGS ID ± 20 30a 30a 15.9b, c 12.8b, c Pulsed Drain Current IDM 70 Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 m H TC = 25 °C TA = 25 °C IAS EAS 20 30a 4b, c TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C 26.7 4.8b, c 3.1b, c Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d, e TJ, Tstg - 55 to 150...