SiRS4301DP
SiRS4301DP is P-Channel MOSFET manufactured by Vishay.
FEATURES
- Leadership RDS(on) minimizes power loss from conduction
- 100 % Rg and UIS tested
- Enhance power dissipation and lower Rth JC
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Adapter and charger switch
- Load switch
- Motor drive control
- Battery management
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK SO-8S Si RS4301DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
VDS VGS TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs) Continuous source-drain diode current
TC = 25 °C TA = 25 °C
Single pulse avalanche current Single pulse avalanche energy
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range Soldering remendations (peak temperature) c
TJ, Tstg
LIMIT -30 ± 20 -227...
