SiRS4300DP - N-Channel MOSFET

Features

TrenchFET® Gen IV power MOSFET.
Very low RDS x Qg figure-of-merit (FOM).
100 % Rg and UIS tested.
Enhance power dissipation and lower RthJC.
Leadership RDS(on) minimizes power loss from conduction.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiRS4300DP
Manufacturer	Vishay
File Size	192.52 KB
Description	N-Channel MOSFET
Datasheet	SiRS4300DP Datasheet

📁 Similar Datasheet

SIR-320ST3F - Infrared light emitting diode (Rohm)
SIR-341ST3F - Infrared light emitting diode (Rohm)
SIR-34ST3F - Infrared light emitting diode (Rohm)
SIR-505STA47 - Infrared light emitting diode (Rohm)
SIR-563ST3F - Infrared light emitting diode (Rohm)
SIR-568ST3 - Infrared light emitting diode (Rohm)
SIR-568ST3F - Infrared light emitting diode (Rohm)
SIR-56ST3 - Infrared light emitting diode (Rohm)
SIR-56ST3F - Infrared light emitting diode (Rohm)
SIR19-315-TR8 - 0603 Package Infrared Chip LED (Everlight Electronics)

Other Datasheets by Vishay

SiRS4301DP - P-Channel MOSFET
SiRS4302DP - N-Channel MOSFET
SiRS4400DP - N-Channel MOSFET
SiRS4401DP - P-Channel 40V MOSFET
SiRS4600DP - N-Channel 60V MOSFET
SiRS700DP - N-Channel 100V MOSFET
SiR104ADP - N-Channel 100V MOSFET
SiR104LDP - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

www.vishay.com SiRS4300DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® SO-8S Single D D8 D7 D6 5 6.00 mm 5.00 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 30 0.00040 0.00068 84 680 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • 100 % Rg and UIS tested • Enhance power dissipation and lower RthJC • Leadership RDS(on) minimizes power loss from conduction • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 30, 2024 |