SiRS4301DP - P-Channel MOSFET

Features

Leadership RDS(on) minimizes power loss from conduction.
100 % Rg and UIS tested.
Enhance power dissipation and lower RthJC.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiRS4301DP
Manufacturer	Vishay
File Size	229.40 KB
Description	P-Channel MOSFET
Datasheet	SiRS4301DP Datasheet

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Full PDF Text Transcription

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www.vishay.com SiRS4301DP Vishay Siliconix P-Channel 30 V (D-S) MOSFET PowerPAK® SO-8S Single D D8 D7 D6 5 6.00 mm 5.00 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View -30 0.0015 0.0023 170 -227 Single FEATURES • Leadership RDS(on) minimizes power loss from conduction • 100 % Rg and UIS tested • Enhance power dissipation and lower RthJC • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 17, 2024 |