* TrenchFET® Gen IV power MOSFET
* Very low RDS x Qg figure-of-merit (FOM)
* Leadership RDS(on) minimizes power loss from conduction
* 100 % Rg and UIS tested
* Enhance power dissipation and lower RthJC
* Material categorization: for definitions of com
SiRS4600DP Datasheet (233.25 KB)
SiRS4600DP
233.25 KB
N-channel 60v mosfet.
www.vishay.com SiRS4600DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® SO-8S Single D D8 D7 D6 5 6.00 mm 5.00 mm Top View PRODUCT SUM.
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