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Vishay Intertechnology Electronic Components Datasheet

SiZ926DT Datasheet

Dual N-Channel 25V (D-S) MOSFETs

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www.vishay.com
SiZ926DT
Vishay Siliconix
Dual N-Channel 25 V (D-S) MOSFETs
PowerPAIR® 6 x 5 G2
S2
S2
S2 6
7
8
5 S1/D2
(Pin 9)
6 mm
1 5 mm
Top View
D1 1
4
D1
3
D1
2
D1
G1
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a, g
Configuration
CHANNEL-1 CHANNEL-2
25 25
0.00480
0.00220
0.00790
0.00335
5.9 12.5
40 60
Dual
FEATURES
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Optimized Qgs/Qgs ratio improves switching
characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
• POL
• Synchronous buck converter
• Telecom DC/DC
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAIR 6 x 5
SiZ926DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (100 μs pulse width)
Continuous source drain diode current
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 100 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
25 25
+16, -12
+16, -12
40 a
60 a
40 a
60 a
22 b, c
37 b, c
17.5 b, c
30 b, c
100 170
16.8 33.6
3.2 b, c
4 b, c
15 28
11 39
20.2 40
12.9
25.8
3.8 b, c
4.8 b, c
2.4 b, c
3.1 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP. MAX.
CHANNEL-2
TYP. MAX.
UNIT
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t 10 s
Steady state
RthJA
RthJC
26 33 21 26
4.7 6.2 2.5 3.1
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2.
g. TC = 25 °C.
S17-0334-Rev. B, 06-Mar-17
1
Document Number: 68127
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiZ926DT Datasheet

Dual N-Channel 25V (D-S) MOSFETs

No Preview Available !

www.vishay.com
SiZ926DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS Temperature coefficient
VGS(th) Temperature coefficient
Gate threshold voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = 250 μA
ID = 250 μA
ID = 250 μA
ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = 250 μA
Gate source leakage
IGSS VDS = 0 V, VGS = +16 V, -12 V
Zero gate voltage drain current
On-state drain current b
Drain-source on-state resistance b
Forward transconductance b
Dynamic a
IDSS
ID(on)
RDS(on)
gfs
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55 °C
VDS = 25 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 3 A
VGS = 4.5 V, ID = 5 A
VGS = 10 V, ID = 5 A
VGS = 10 V, ID = 8 A
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Coss
Crss
Channel-1
VDS = 10 V, VGS = 10 V, f = 1 MHz
Channel-2
VDS = 10 V, VGS = 10 V, f = 1 MHz
Crss/Ciss ratio
Total gate charge
Gate-source charge
Gate-drain charge
VDS = 10 V, VGS = 10 V, ID = 5 A
Qg
VDS = 10 V, VGS = 10 V, ID = 8 A
VDS = 10 V, VGS = 4.5 V, ID = 5 A
VDS = 10 V, VGS = 4.5 V, ID = 8 A
Qgs
Channel-1
VDS = 10 V, VGS = 4.5 V, ID = 5 A
Qgd
Channel-2
VDS = 10 V, VGS = 4.5 V, ID = 8 A
Output charge
Qoss
VDS = 10 V, VGS = 0 V
Gate resistance
Rg f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
MIN. TYP. MAX. UNIT
25 -
25 -
-
V
-
- 19 -
- 15 -
mV/°C
- 4.9 -
- 4.6 -
1.1 - 2.2
V
1.1 - 2.2
- - 100
nA
- - 100
- -1
- -1
μA
- - 10
- - 10
20 -
20 -
-
A
-
- 0.00380 0.00480
- 0.00173 0.00220
- 0.00640 0.00790
- 0.00265 0.00335
- 40 -
S
- 55 -
- 925 -
- 2150 -
- 310 -
pF
- 800 -
- 52 -
- 100 -
- 0.056 0.115
- 0.047 0.095
- 12.5 19
- 27 41
- 5.9 8.9
- 12.5 19
- 2.5 -
nC
- 5.4 -
- 1.2 -
- 2.1 -
-5-
- 13 -
0.18 0.92
1.9
0.12 0.6
1.2
S17-0334-Rev. B, 06-Mar-17
2
Document Number: 68127
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiZ926DT
Description Dual N-Channel 25V (D-S) MOSFETs
Maker Vishay
Total Page 14 Pages
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