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SiZ988DT - Dual N-Channel MOSFETs

Key Features

  • TrenchFET® Gen IV power MOSFETs.
  • 100 % Rg and UIS tested.
  • Optimized Qgs/Qgs ratio improves switching characteristics.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiZ988DT
Manufacturer Vishay
File Size 232.84 KB
Description Dual N-Channel MOSFETs
Datasheet download datasheet SiZ988DT Datasheet

Full PDF Text Transcription for SiZ988DT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiZ988DT. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com SiZ988DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.0075 at VGS = 10 V 0.012...

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Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 0.0041 at VGS = 10 V 0.0052 at VGS = 4.5 V ID (A) 40 g 32 g 60 60 Qg (TYP.) 6.9 nC 15.4 nC PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pin 9) 6 mm 1 5 mm Top View D1 1 4 D1 3 D1 2 D1 G1 Bottom View Ordering Information: SiZ988DT-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.

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